GaN Systems New Half-Bridge Designs Increase Output Power More Than 30%

December 16, 2020 9:15 AM EST | Source: Reportable, Inc.

Ottawa, Ontario--(Newsfile Corp. - December 16, 2020) - GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, announced today the launch of its next generation Insulated Metal Substrate (IMS3) platform for use with its GaN E-HEMTs in high power, high efficiency automotive, data center, and industrial applications.

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Key Takeaways:

  • GaN Systems launched its Insulated Metal Substrate (IMS3) platform for use with its GaN E-HEMTs in high power, high efficiency automotive, data center, and industrial applications.
  • The platform features significantly improved heat transfer making it an ideal reference for implementing smaller and lower cost systems at the same power level or alternatively increasing output power by 30% in the same size.
  • The platform consists of the IMS3 motherboard and a half-bridge power board, which is available in two power levels up to 3 kW and up to 6 kW.

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About GaN Systems

GaN Systems is the global leader in GaN power semiconductors with the largest portfolio of transistors that uniquely address the needs of today’s most demanding industries including consumer electronics, data center servers and power supplies, renewable energy systems, industrial motors, and automotive electronics. As a market-leading innovator, GaN Systems makes possible the design of smaller, lower cost, more efficient power systems. The company’s award-winning products provide system design opportunities free from the limitations of yesterday’s silicon. By changing the rules of transistor performance, GaN Systems is enabling power conversion companies to revolutionize their industries and transform the world. For more information, please visit: www.gansystems.com or on Facebook, Twitter and LinkedIn and scan this QR code for our WeChat.

Contacts:

Mary Placido
4152183627
mary@triercompany.com

Source: GaN Systems

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